Binding energy and dephasing of biexcitons in In0.18Ga0.82As/GaAs single quantum wells
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چکیده
منابع مشابه
Binding Energy of Localized Biexcitons in Quantum Wells
A variational calculation of the ground state energy of a biexciton in a GaAs/AlGaAs quantum well is presented. The well width fluctuations leading to trapping of the biexcitons are modeled by a parabolic potential. The results obtained for different well widths are compared with recent experimental data. Good agreement is obtained both for the biexciton binding energy and for the Haynes factor...
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